Band structure and confined energy levels of the Si3N4/Si/GaAs system

نویسندگان

  • Z. Chen
  • Y. C. Chang
چکیده

The band structure of strained Si ~4–10 ML! on ~001! GaAs, band lineups of the strained Si/~001!GaAs heterojunction, and confined energy levels of the Si3N4 /Si/GaAs quantum well have been calculated via a pseudopotential method. It has been found that in this technically important Si3N4 /Si/~001!GaAs structure, strained Si has a very narrow band gap ~0.34 eV! at the D' point in the Brillouin zone. For the strained Si/~001!GaAs heterojunction, the conduction band offsets from the D' for Si to the G valley for GaAs is 0.83 eV, and that from the D' valley for Si to the X valley for GaAs is 1.21 eV. The valence band offset is 0.25 eV. The lowest confined energy level in the conduction band of the Si3N4 /Si/GaAs quantum well ranging from 4 to 10 monolayers is found to be 0.22–0.28 eV above the conduction band edge of strained Si, or 0.57–0.61 eV below the conduction band edge of GaAs, while the first confined energy level in the valence band is barely above the valence band maximum of GaAs. The accumulation and inversion take place at these confined energy levels. © 1997 American Institute of Physics. @S0021-8979~97!05213-4#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Physical and electrical properties of a Si3N4 ÕSiÕGaAs metal–insulator–semiconductor structure

We simulated capacitance–voltage (C – V) curves of Si3N4 /GaAs, Si3N4 /Si and also Si3N4 /Semi* ~virtual semiconductor! metal–insulator–semiconductor ~MIS! capacitors and compared them with experimental C – V curves of a Si3N4 /Si/GaAs structure. The experimental C – V curves of the Si3N4 /Si/GaAs MIS capacitors are not in agreement with the simulated C – V curves of the Si3N4 /GaAs and Si3N4 /...

متن کامل

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

متن کامل

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

Interfacial properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been investigated. Conductance loss measurements show that a minimum interface trap density as low as 5.5310 cm eV has been achieved on p-type GaAs by using a high quality strained Si interlayer. The quasistatic and high-frequency capacitance-voltage measurements as well as the theoretical...

متن کامل

Gallium and Arsenic doped on (4, 4) armchair and (8, 0) zigzag models of Boron phosphide nanotubes: NMR study

Abstract The structural and electrostatic properties of the single-walled two representative (8, 0) zigzag and (4, 4) armchair models of pristine and GaAs-doped on boron phosphide nanotubes (BPNTs) was investigated by calculating the nuclear magnetic resonance tensors and with performing the density function theory. The geometrical structures of all representative pristine and GaAs-doped mode...

متن کامل

Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997